Industrial furnace. Fig. 3 Schematic representation of the Kyropoulos method. Pull. Seed. Crucible. Crystal. Melt. Bottom heater. Thermal insulation. Side heater . The Czochralski (CZ) method of crystal growth was discovered in by Jan In the Kyropoulos method, pure alumina powder is placed in a crucible and. Kyropoulos method. The method was developed in and consists from smooth crystal growth at low temperature gradient. And lowered melt level.

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Kyropoulos crystal growth mono-crystal furnace crucible detachment method, temperature control method and control method. The long slow cooling process results in exceptional crystal quality.

Tensometric weighing facilities provide higher measurement accuracy. After 12 hours, open the intake valve, pressure in the furnace and the single kyropoullos outside the same, closed cooling water system, crystal lid open, remove the sapphire single crystal, to complete the process.

Thus, we have created conditions favorable for the selection of geometric kernel that will be used for further crystal growth. The melt was gradually cooled and rod in the melt was ventilated by air cooler.

One of the automation methods uses weighing facilities. By precisely controlling the kyropoulox gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt. The relation between the cooling and pulling rates at different stages of the growth process defines the crystal shape and quality to a considerable extent.

After being modified by the State Optical Institute in Russia, this method became applicable to the growth of sapphire. Unidirectional solidified silicon ingot and manufacturing method thereof, jyropoulos plate, substrate for solar cell and target base material for sputtering. Sapphire crystal growing furnace heat field, crystal growing furnace with heat field and crystal ,yropoulos process of crystal growing furnace.

The physics involved in the Verneuil process, virtually unchanged kyro;oulos its original design, limit the size and shape of items that can be produced.

The Kyropoulos method is used to grow sapphire crystals with a diameter exceeding mm and a weight larger than 80 kg. Retrieved 16 January After 25 hours, the crystalline mass reaches 3. The first of these is observed at the initial growth stage and corresponds to the increase in radiant heat kyropooulos from the growing seed.


Kyropoulos method – consists from smooth crystal growth at low temperature gradient.

Hanging the seed from a weight sensor can provide feedback to determine the growth rate, although precise measurements are complicated by the changing and imperfect shape of the crystal diameter, the unknown convex shape of the solid-liquid interface, and these features’ interaction with buoyant forces and convection within the melt. When it was carefully pulled out, a sapphire crystal grew on the wire.

Views Read Edit View history. This page was last edited on 2 Decemberat At the final stage of growth the conditions change again.

Kyropoulos process

Kyropoulos introduced his technique as a way of producing large single crystals that were free of cracks and damage due to restricted containment. The furnace is held at constant temperature during growth of the crystal, which grows from the seed in three dimensions. A precisely oriented seed crystal is dipped into the molten alumina. In contrast with the Czochralski processthe Kyropoulos process crystallizes the entire feedstock volume into the boule.

In the ensuing decades, new methods of synthesizing sapphire have emerged, and many have since been customized into proprietary processes used by manufacturers worldwide.

Process for preparing gallium doped elementarysubstance solar energy single crystal. The method was developed in and consists from smooth crystal growth at low temperature gradient.

After 15 hours after the step of closing the shoulder, when the crystalline mass reaches 5 kg, at a speed O. Intechnician Harold Labelle was enlisted by Tyco Industries in Waltham, MA to develop a process for growing sapphire fibers as reinforcement for metal-matrix compounds.

The resulting crystals typically have curved growth striations, which limits their use in optical applications. EFG-produced crystal material is typically of low to medium optical quality, and can be precisely produced in different crystallographic orientations A, C, random. Now it proceeds from the center to the periphery; the second maximum appears on the curve.

Method for restraining bulbs in process of growing slice-shaped sapphire in guiding mold mode. A sapphire seed of specific crystallinity is dipped into the melt on top of the die and drawn out —solidifying into sapphire in the shape of the die — typically a tube, rod or ribbon. Labelle observed that cold tungsten plunged into molten alumina formed small crystalline alumina dendrites on the tungsten. With this highly controlled thermal-gradient, the Kyropoulos method yields large-diameter boules of very high optical quality due to its high purity.

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Example particular embodiment of the present process is as follows: Kyropolous grown sapphire is ideal for many optical applications including electronics substrates, IR detectors, fiber-optic lensesoptics windows, missile domes, lenses, probes, lasersand manufacturing. Method to restrain bubbles in process of growing sapphire by using kyropoulos method.

A linear temperature decrease and a constant pulling rate lead to the formation of pear-shaped crystals with somewhat elevated pore density in the nose and tail parts of the crystal. Semiconductor growth Industrial processes Crystals. In the modern implementation of HEM, a sapphire seed crystal is placed at the bottom of a crucible which is then loaded with pure alumina crackle, a byproduct of the Verneuil process. In LaBelle used his method to produce the first as-grown sapphire tubes.

Method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method and application thereof. CZ remains essentially unchanged today. Large shoulder rotation to expand the number of kilograms of sapphire crystal pulled stable law.

Method for producing high-purity high-density alumina block material for sapphire single crystals. The chamber is then backfilled with an inert gas to prevent the introduction of atmospheric gases into the melt during crystal growth. CN CNB en The Czochralski method poduced material in thin kyroopulos filaments, and Verneuil boules had basic dimensional limitations.

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Kyropoulous Method The Czochralski method poduced material in thin crystal filaments, and Verneuil boules had basic dimensional limitations. Rapid growth of this cone increases the density of macro- and microdefects, so the growth rate at this stage must be reduced.

Attempts to produce extra large boules using this method have proven largely unsuccessful due to cracking during the cooling process. The resulting process was essentially a Czochralski technique with the benefit of crystal shape kyropouloos. The Czochralski CZ method of crystal growth was discovered in by Jan Czochralski — and was the fortunate result of an accident and insightful observation.